2019/01/30 by V. Ryzhii, M. Ryzhii, Ryzhii, Victor +10
Engineering · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photonic and Optical Devices #Plasmonic and Surface Plasmon Research #Terahertz technology and applications
paper · pdf · doi:10.48550/arxiv.1901.10755
openalex publication_date 2019/01/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose and analyze the heterostructure comprising a\nblack-arsenic-phosphorus layer (b-As1-xPxL) and a graphene layer (GL)\nintegrated with a light-emitting diode (LED). The integrated\nb-As1-xPxL-GL-LED heterostructure can serve as an active part of the\nterahertz (THz) laser using the interband radiative transitions in the GL. The\nfeasibility of the proposed concept is enabled by the combination of relatively\nnarrow energy gap in the b-As1-xPxL and the proper band alignment with\nthe GL. The operation of the device in question is associated with the\ngeneration of the electron-hole pairs by the LED emitted near-infrared\nradiation in the b-As1-xPxL, cooling of the photogenerated electrons\nand holes in this layer, and their injection into the GL. Since the minimum\nb-As1-xPL energy gap is smaller than the energy of optical phonons in the\nGL, , the injection into the GL can lead to a relatively weak heating of the\ntwo-dimensional electron-hole plasma (2D-EHP) in the GL. At the temperatures\nsomewhat lower than the room temperature, the injection can cool the 2D-EHP.\nThis is beneficial for the interband population inversion in the GL,\nreinforcement of its negative dynamic conductivity, %in the THz range and the\nrealization of the optical and plasmonic modes lasing supporting the new types\nof the THz radiation sources.\n