2009/04/21 by Yun Liu, Jia Zhang, Liu, Yun +1
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Metallurgical Processes and Thermodynamics #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0904.3234
arxiv created 2009/04/21 · openalex publication_date 2009/04/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Nanoscale lithography on La0.7Sr0.3MnO3 (LSMO) thin film surfaces has been performed by scanning tunneling microscopy under ambient conditions. From line-etching experiments we found that the line depth is increasing in a step-wise fashion with increasing bias voltage as well as with decreasing scan speed. On average, the depth of the etched lines is an integral multiple of the LSMO out-of-plane lattice constant about 0.4 nm. A minimum wall thickness of 1.5 nm was obtained between etched lines. We have utilized the ability to control the etched line depths to create complicated inverse-pyramid nanostructure. Our work shows the feasibility of using STM lithography to create controllable and complex nanoscale structures in LSMO thin film.