2017/09/23 by Everett D. Grimley, Grimley, Everett D., Tony Schenk +7 · 2 citations
Engineering · Materials Science · #Anodic Oxide Films and Nanostructures #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1709.08110
openalex publication_date 2017/09/23 · openalex created_date 2022/10/04 · openalex updated_date 2026/07/28
Though the electrical responses of the various polymorphs found in\nferroelectric polycrystalline thin film HfO2 are now well characterized,\nlittle is currently understood of this novel material's grain sub-structure. In\nparticular, the formation of domain and phase boundaries requires investigation\nto better understand phase stabilization, switching, and interconversion. Here,\nwe apply scanning transmission electron microscopy to investigate the atomic\nstructure of boundaries in these materials. In particular, we find\northorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic\ninterphase boundaries formed throughout individual grains. The results inform\nhow interphase boundaries can impose strain conditions that may be key to phase\nstabilization. Moreover, the atomic structure near interphase boundary walls\nsuggests potential for their mobility under bias, which has been speculated to\noccur in perovskite morphotropic phase boundary systems by mechanisms similar\nto domain boundary motion.\n