2014/03/21 by M. Minohara, Makoto Minohara, Minohara, M. +23
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1403.5594
16 pages, 4 figures
arxiv created 2014/03/21 · openalex publication_date 2014/03/21 · arxiv updated 2014/03/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.