2020/10/05 by Sameer Kumar Mallik, Mallik, Sameer Kumar, Sandhyarani Sahoo +12
Engineering · Materials Science · #2D Materials and Applications #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2010.02052
openalex publication_date 2020/10/05 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
Atomically thin semiconductors have versatile future applications in the\ninformation and communication technologies for the ultimate miniaturization of\nelectronic components. In particular, the ongoing research demands not only a\nlarge-scale synthesis of pristine quality monolayer MoS2 but also advanced\nnanofabrication and characterization methods for investigation of intrinsic\ndevice performances. Here, we conduct a meticulous investigation of the fast\ntransient charge trapping mechanisms in field-effect transistors (FETs) of\nhigh-quality CVD MoS2 monolayers grown by a salt-driven method. To unfold the\nintrinsic transistor behavior, an amplitude sweep pulse I~V methodology is\nadapted with varying pulse widths. A significant increase in the field-effect\nmobility up to ~100% is achieved along with a hysteresis-free transfer\ncharacteristic by applying the shortest pulse. Moreover, to correlate these\nresults, a single pulse time-domain drain current analysis is carried out to\nunleash the fast and slow transient charge trapping phenomena. Furthermore,\nrigorous density functional theory (DFT) calculations are implemented to\ninspect the effects of the Schottky barrier and metal-induced gap states\nbetween drain/source electrode and MoS2 for the superior carrier transport. Our\nfindings on the controllable transient charge trapping mechanisms for\nestimation of intrinsic field-effect mobility and hysteresis-free transfer\ncharacteristic in salt-assisted CVD-grown MoS2 FETs will be beneficial for\nfuture device applications in complex memory, logic, and sensor systems.\n