Efficiently Engineered Room Temperature Single Photons in Silicon Carbide

2012/10/18 by Stefania Castelletto, Brett C. Johnson, Castelletto, S. +7
Engineering · #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Laser Material Processing Techniques #Materials Science (cond-mat.mtrl-sci) #Nonlinear Optical Materials Studies

paper · pdf · doi:10.48550/arxiv.1210.5047

openalex publication_date 2012/10/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum information, computation and photonic applications. The maximum single photon count rate detected is 700k counts/s with an inferred quantum efficiency around 70%. The single photon sources are due to intrinsic deep level defects constituted of carbon antisite-vacancy pairs. These are shown to be formed controllably by electron irradiation. The variability of the temporal kinetics of these single defects is investigated in detail.

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