2024/03/26 by Runnan Zhang, Y. Yasui, Zhang, Runnan +13
Engineering · Materials Science · Physics and Astronomy · #Advanced Materials Characterization Techniques #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Force Microscopy Techniques and Applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2403.17427
openalex publication_date 2024/03/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond investigating surface defects and adsorbates; it also involves unraveling the mystery of the smooth growth of diamond. However, the inherently low conductivity and the short C-C bonds render atomic resolution imaging exceptionally challenging. Here, we successfully overcame these challenges by employing non-contact atomic force microscopy with reactive Si tips. Atomic resolution imaging was achieved even at room temperature. With density-functional-theory calculations, we clarified that the critical factors for atomic resolution are in the formation of tilted C-Si bonds between scanning probes and surfaces, along with reordering of the surface C-C dimers. Implications of the findings extend beyond the realm of surface characterization. The present atomic-resolution microscopies drive future advancements in diamond technologies by providing avenues for identifying dopants and constructing artificial nanostructures.