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Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene

2024/07/19 by Divya Sahani, Sahani, Divya, Sunit Das +8 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Magnetic Field Sensors Techniques #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.2407.14071

openalex publication_date 2024/07/19 · openalex created_date 2024/09/26 · openalex updated_date 2026/07/30

Abstract

Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr2Te2Ge6 (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect.

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