2008/02/27 by C. Blomers, Christian Blömers, Blomers, C. +13 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.0802.4014
5 pages, 5 figures
arxiv created 2008/02/27 · openalex publication_date 2008/02/27 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magneto-conductance. For a magnetic field oriented parallel to the wire axis we found that the correlation field mainly depends on the wire cross section, while the fluctuation amplitude is governed by the wire length. In contrast, if the magnetic field is oriented perpendicularly, for wires longer than approximately 200 nm the correlation field is limited by the phase coherence length. Further insight into the orientation dependence of the correlation field is gained by measuring the conductance fluctuations at various tilt angles of the magnetic field.