2023/05/15 by Sushmita Saha, Saha, Sushmita, Deepak Sain +3
Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.2305.08565
openalex publication_date 2023/05/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned appropriately by the gate voltage to create an intense spin-Hall field which in turns interacts with the ferromagnetic layer of the MRAM through the mechanism of spin orbit torque. The strong spin-Hall field leads to an infinitesimally small switching time of the MRAM. Our proposed MRAM is thus a better alternative to the conventional ferromagnetic/spin-Hall effect bi-layers MRAM for the reason that the switching time can be varied with ease, which is unfeasible in the later. Concisely, not only that this work signals a possibility to design an ultra-fast MRAM, but it also suggests a model to fabricate a tunable switching time MRAM.