2018/12/16 by Moones Sabeti, Sabeti, Moones, Hamid Arian Zad +1
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #physics.app-ph
paper · pdf · doi:10.48550/arxiv.1812.06549
23 pages, 9 figures This article has many incorrect theoretical and experimental coincidences. More importantly, it includes two independent parties that is also a major disadvantage for this paper
openalex publication_date 2018/12/16 · arxiv created 2020/07/07 · arxiv updated 2020/07/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Many investigations and reviews show that II-VI compound semiconductor 1-D nanostructures have a great potential for the future electronic and optoelectronic applications. As an important II-VI semiconductor, ZnSe is one of the most significant materials with prominent applications in this issue. In the present work, we firstly provide a comprehensive investigation of the magnetic properties like magnetization and magnetic susceptibility of ZnSe nanostructures as a 1-D quantum many body. The magnetic study of this metal reveals a ferromagnetic-antifferomagnetic transition upon cooling. Magnetization shows a step-like behavior with pronounced plateaus in a specific magnetic field interval at low temperature. This subject has not been investigated in the previous works. In the experimental part, thin films of ZnSe are deposited on glass substrates (at two different substrate temperature) by the spray pyrolysis technique and annealed in vacuum at 400^∘C for 1 hour. Hereby, we investigate the morphology, structural and optical properties of ZnSe thin films using field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD) and UV-vis spectrophotometer measurements. XRD analysis reveal that annealed films grown on glass substrate at 400^∘C are polycrystalline in nature with cubic zincblene structure. By annealing, the grains size, the diameter and density of the particles increase. The UV-vis measurements display a red-shift of the absorption edge from the as-deposited to annealed ZnSe thin films as compared to its value for the ZnSe thin films. The band-gaps of the annealed samples are estimated about 2.71 eV, which are in consistence with the band gap of ZnSe thin films. The average transmittance of the annealed samples are over 80 % close to the infrared wavelength range.