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AC-Driven Perovskite Light-Emitting Transistors

2017/10/05 by Francesco Maddalena, Maddalena, Francesco, Xin Yu Chin +7
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #Conducting polymers and applications #FOS: Physical sciences #Organic Light-Emitting Diodes Research #Perovskite Materials and Applications #physics.app-ph

paper · pdf · doi:10.48550/arxiv.1710.01900

arxiv created 2017/10/05 · openalex publication_date 2017/10/05 · arxiv updated 2017/10/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light-emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices. Moreover, high frequency modulation enables electroluminescence emission up to room temperature.

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