2025/12/28 by Elahe Moeini Sede, Mohammad Hossein Majles Ara, Moeini Sede, Elahe +5
Materials Science · #Chemical and Physical Properties of Materials #NZO nanoparticles #Nickel doping #P-N junctions #Photodiodes #Polymer Nanocomposite Synthesis and Irradiation #Zinc oxide #ZnO doping and properties
paper · doi:10.57647/inl.2024.1402.12
openalex publication_date 2025/12/28 · openalex created_date 2025/12/29 · openalex updated_date 2026/07/01
In this study, the structure of zinc oxide doped with nickel at different concentrations of 0%, 1%, 3%, 5%, and 10% was examined. Zinc oxide was synthesized using the sol-gel method. Prepared sols coated on silicon wafer by spin coating method to be used as a photodiode in an electrical circuit for evaluation. XRD, UV-Vis, FT-IR, and SEManalyses were utilized to compare the structures of the solutions, powders and thin layers. The zinc oxide structure, with the addition of nickel, reduced in size from 28 nm to 21 nm. The substituted nickel created defects, which led to peak broadening of XRD and a blue shift in UV-Vis spectrum. The photovoltaic properties are studied to understand the behavior of the structures and the current-voltage diagrams of the samples were plotted. The calculations indicate that the zinc oxide sample doped with 3% nickel, prepared using this method, exhibits the best performance as an optical photodiode in the UV range. It shows a better response in I-C curve and ideality factor. Also, the structure of this percentage has the best performance.