Negative differential resistance with graphene channels, interfacing distributed quantum dots in Field-Effect Transistors

2013/07/25 by Trivedi, Samarth, Grebel, Haim
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optics (physics.optics)

paper · doi:10.48550/arxiv.1307.6790

Abstract

Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array; each filled hole was occupied by one dot. Differential optical and electrical conductance was observed. Since Negative Differential Resistance (NDR) is key to high-speed elements, such construction may open the door for new electro-photonic devices.

Related

• Controlled quantum dot formation in atomically engineered graphene\n nanoribbons field-effect transistors
• Graphene nanodevices: bridging nanoelectronics and subwavelength optics
• Tunable Negative Differential Resistance in Planer Graphene Superlattice Resonant Tunneling Diode
• Application of Graphene within Optoelectronic Devices and Transistors
• Quantum dot transistors based on CVD-grown graphene nano islands