2022/10/30 by Tosson Elalaily, Elalaily, Tosson, Martin Berke +15 · 2 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.2210.16827
openalex publication_date 2022/10/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.