Mott-Hubbard localization in model of electronic subsystem of doped fullerides

2012/01/13 by Yuriy Dovhopyaty, L. Didukh, Leonid Didukh +8
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #FOS: Physical sciences #Fullerene Chemistry and Applications #Graphene research and applications #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.1201.2748

arxiv created 2012/01/13 · openalex publication_date 2012/01/13 · arxiv updated 2012/01/16 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling n=1 is calculated, which case corresponds to AC₆₀ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.

Related

• Quantum Monte Carlo calculations for integer-doped Fullerides
• Fixed-node DMC for Fermions on a lattice: Application to the doped Fullerides
• Dimer in the Hubbard model. Exact and approximate solutions
• Theoretical aspects of highly correlated fullerides: metal-insulator transition
• Electronic properties of the degenerate Hubbard Model : A dynamical mean\n field approach