2011/12/07 by Shawn M. Willis, Cheng Cheng, Willis, Shawn M. +5
Materials Science · Engineering · Physics and Astronomy · #Quantum Dots Synthesis And Properties #Chalcogenide Semiconductor Thin Films #Semiconductor materials and interfaces
paper · pdf · doi:10.48550/arxiv.1112.1623
Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes create a constant capacitance that distorts the junction's depletion capacitance and result in erroneous Vbi and N values when determined through Mott-Schottky analysis. The injection barrier capacitance is taken into account by incorporating a constant capacitance in parallel with the depletion capacitance.