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Excited Rydberg States in TMD Heterostructures

2021/03/16 by Jacob Viner, Liam P. McDonnell, Viner, Jacob J. S. +11
Engineering · Materials Science · #2D Materials and Applications #Advanced Semiconductor Detectors and Materials #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · pdf · doi:10.48550/arxiv.2103.09004

openalex publication_date 2021/03/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman experiments on specific Raman peaks only observed at excited states of the excitons. This data is used to validate a model of the Coulomb potential in these structures which predicts the exciton energies to within ~5 meV / 2.5%. This model is used to determine the effect of heterostructure formation on the single-particle band gaps of the layers and will have a wide applicability in designing the next generation of more complex transition metal dichalcogenide structures.

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