2020/03/24 by Julius de Rojas, de Rojas, Julius, Alberto Quintana +32
Engineering · Materials Science · #Advanced Memory and Neural Computing #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.2003.11137
openalex publication_date 2020/03/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4, both layers showing a nanocrystalline face-centered-cubic structure and reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results are appealing for the use of magneto-ionics in nitride semiconductor devices, in applications requiring endurance and moderate speeds of operation, such as brain-inspired computing.