2025/08/29 by Jiaxin Lv, Lv, Jiaxin, Silan Li +9
Engineering · Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2508.21359
openalex publication_date 2025/08/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The heterointerfaces at complex oxides have emerged as a promising platform for discovering novel physical phenomena and advancing integrated sensing, storage, and computing technologies. Nevertheless, achieving precise control over a two-dimensional electron gas (2DEG) in a ferroelectric oxide-based field-effect transistor (FET) configuration remains challenging. Here, we firstly demonstrate a tunable 2DEG system fabricated by depositing an amorphous LaAlO3(LAO) film onto a (001)-oriented ferroelectric potassium tantalate niobate substrate. Interfaces grown under high-temperature and high-oxygen-pressure conditions exhibit a good metallic conduction. Notably, well-defined metallic 2DEGs displaying pronounced hysteresis and persistent electric-field-modulated resistance are observed below 108 K, achieving a resistance modulation of 11.6% at 7 K. These results underscore the potential for extending such behavior to other oxide-based 2DEG systems and facilitate further exploration of ferroelectric metals in complex oxide heterostructures.