Gate tunable anomalous Hall effect: a Berry curvature probe at oxides interfaces

2022/02/09 by Mattia Trama, C. A. Perroni, Trama, Mattia +7
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.2202.04664

openalex publication_date 2022/02/09 · openalex created_date 2022/04/03 · openalex updated_date 2026/07/28

Abstract

The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a non magnetic oxide interface as a hallmark of a non-trivial Berry curvature. The observed AHE at low-temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE non-linearities in (111) SrTiO₃ heterostructure interfaces.

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