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Theoretical Description of Ferroelectric and Pyroelectric Hysteresis in the Disordered Ferroelectric-Semiconductor Films

2006/02/01 by Anna N. Morozovska, Eugene А. Eliseev, Morozovska, A. N. +1
Engineering · Materials Science · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Ferroelectric and Piezoelectric Materials #Liquid Crystal Research Advancements #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.cond-mat/0602014

openalex publication_date 2006/02/01 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

We have modified Landau-Khalatnikov approach and shown that both the polar lattice and the screened charged defects determine the response of disordered ferroelectric-semiconductors. This system exhibits the spatially inhomogeneous switching under the external field while Landau-Khalatnikov model describes homogeneous switching with the sharp pyroelectric coefficient peak near the thermodynamic coercive field value. Our model gives more realistic pyroelectric hysteresis loop shape without any peaks near the coercive field and describes both qualitatively and quantitatively typical Pb(Zr,Ti)O3 and (Sr,Ba)Nb2O6 films pyroelectric hysteresis loops.

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