2012/03/10 by Michael Sentef, Michael A. Sentef, Sentef, Michael +5
Materials Science · Physics and Astronomy · #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1203.2216
7 pages, 9 figures
arxiv created 2012/03/10 · openalex publication_date 2012/03/10 · arxiv updated 2012/03/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We model disorder in graphene by random impurities treated in a coherent-potential approximation. Using the analytically solvable Lloyd model for the disorder distribution, we show that the temperature dependence of the minimum conductivity as well as the temperature dependence of the resistivity at high densities and the density dependence of the respective slopes are consistently explained by a temperature dependent disorder strength Γ consisting of a constant plus a T-linear contribution. This finding suggests that at least two contributions to scattering in graphene are important for its transport properties, and that one of the contributions is due to scattering of electrons from thermally induced excitations.