Dependence of Mobility on Density of Gap States in Organics by GAMEaS - Gate Modulated Activation Energy Spectroscopy

2006/08/30 by W. So, Woo‐Young So, So, W. +11
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Machine Learning in Materials Science #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #Soft Condensed Matter (cond-mat.soft) #cond-mat.mtrl-sci #cond-mat.soft

paper · pdf · doi:10.48550/arxiv.cond-mat/0608687

15 pages, 3 figures

openalex publication_date 2006/08/30 · arxiv created 2007/05/14 · arxiv updated 2009/12/01 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

We develop a broadly applicable transport-based technique, GAte Modulated activation Energy Spectroscopy (GAMEaS), for determining the density of states (DOS) in the energy gap. GAMEaS is applied to field effect transistors made from different single crystal oligomer semiconductors to extract the free-carrier mobility, u₀, from the field effect mobility, u_eff. Samples with a lower DOS exhibit higher u_eff. Values of u₀ up to 100 +/- 40 cm2/Vs at 300K are observed, showing that performance can be greatly enhanced by improving sample purity and crystal quality.

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