2006/08/25 by S. G. Novokshonov, Novokshonov, S. G., A. G. Groshev +1
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum chaos and dynamical systems #Theoretical and Computational Physics #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0608561
10 pages, 6 figures, revised version of cond-mat/0508681
arxiv created 2006/08/25 · openalex publication_date 2006/08/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
An analytical approach to calculation of the conductivity tensor, σ, of a two-dimensional (2D) electron system with Rashba spin-orbit interaction (SOI) in an orthogonal magnetic field is proposed. The electron momentum relaxation is assumed to be due to electron scattering by a random field of short-range impurities, which is taken into account in the Born approximation. An exact expression for the one-particle Green function of an electron with Rashba SOI in an arbitrary magnetic field is suggested. This expression allows us to obtain analytical formulas for the density of states (DOS) and σ in the self-consistent Born and ladder approximation, respectively, which hold true in a wide range of magnetic fields, from the weak (ωcτ<< 1) up to the quantizing (ωcτ\gtrsim 1) ones. It is shown that in the ladder approximation the Rashba SOI has no effect at all on the conductivity magnitude in the whole range of classical (non quantizing) magnetic fields. The Shubnikov-de Haas (SdH) oscillation period is shown to be related to the total charge carrier concentration by the conventional formula, irrespective of the SOI magnitude. A simple equation defining the location of the SdH oscillation beating nodes is obtained. The results are in good agreement with the experimental and recent numerical investigations.