2018/10/12 by Siyuan Wan, Wan, Siyuan, Yue Li +19
Engineering · Materials Science · #2D Materials and Applications #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Perovskite Materials and Applications
paper · pdf · doi:10.48550/arxiv.1810.05328
openalex publication_date 2018/10/12 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
Recent experiments on layered α-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders α-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field effect transistor (FeFET) made of ultrathin α-In2Se3 and graphene. The resistance of graphene channel in the FeFET is tunable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly re-written over more than 105 cycles without losing the non-volatility. Our approach demonstrates a protype of re-writable non-volatile memory with ferroelectricity in van de Waals 2D materials.