2020/01/18 by Zhigang Song, W. J. Fan, Song, Zhigang +11
Engineering · Materials Science · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Photonic and Optical Devices #Semiconductor materials and devices #Silicon Nanostructures and Photoluminescence
paper · pdf · doi:10.48550/arxiv.2001.06601
openalex publication_date 2020/01/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped n-type Ge and confirmed in experiment the PFS associated E1+Δ1 transition by advanced in situ doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between E1 and E1+Δ1 optical transitions made the PFS associated E1 transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the E1 and E1+Δ1 transition, making it possible to reveal the PFS associated E1 transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with E1+Δ1 transition at inequivalent L-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors.