Intrinsic anomalous, spin and valley Hall effects in ex-so-tic van-der-Waals structures

2024/04/20 by I. Wojciechowska, Wojciechowska, I., A. Dyrdał +1 · 1 citation
Physics and Astronomy · Materials Science · #Quantum and electron transport phenomena #Graphene research and applications #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2404.13451

Abstract

We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine ex-so-tic graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) between semiconducting van-der-Waals material with strong SOC (e.g., WS₂) and ferromagnetic and insulating vdW material (e.g. Cr₂Ge₂Te₆). Reducing the effective Hamiltonian derived by Zollner et al [Phys. Rev. Lett. 125(19), 196402 (2020)] to low-energy states, and using the Green function formalism, we derived analytical results for the Hall conductivities as a function of the Fermi level and gate voltage. Depending on these parameters, we found quantized valley conductivity.

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