On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator

2021/01/04 by Zhou, Junxia, Liang, Youting, Liu, Zhaoxiang +11 · 1 citation
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Optics (physics.optics)

paper · doi:10.48550/arxiv.2101.00783

Abstract

We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

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• Monolithic low-noise erbium-doped thin-film lithium niobate waveguide amplifier with 18 dB fiber to fiber net gain

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