2020/06/20 by Muhammad Usman, Usman, Muhammad
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2006.15989
openalex publication_date 2020/06/20 · openalex created_date 2020/07/02 · openalex updated_date 2026/07/28
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical transition strengths predict that a nearly zero degree of polarisation can be achieved at 1550 nm emission/absorption wavelength by engineering the number of QD layers in a columnar QD. These results are promising for the design of optical devices requiring polarisation insensitive optical response such as semiconductor optical amplifiers.