2017/04/10 by Uwe Scheithauer, Scheithauer, Uwe
Engineering · Materials Science · #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Integrated Circuits and Semiconductor Failure Analysis #Ion-surface interactions and analysis #Metal and Thin Film Mechanics
paper · pdf · doi:10.48550/arxiv.1704.03051
openalex publication_date 2017/04/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
For sputter depth profiling often sample erosion by Ar+ ions is used. Only a\nhigh purity of the sputter gas and a low contamination level of the ion gun\navoids misleading depth profile measurements results. Here a new measurement\nprocedure is presented, which monitors these parameters. A Si sample is\nsputtered inside the instrument and then the surface concentration of the\nelements Ar, C, N and O is measured. Results of such measurements of an XPS\nmicroprobe PHI Quantum 2000, which were recorded over a period of 10 years, are\npresented.\n