2013/01/25 by Zhaoqiang Bai, Bai, Zhaoqiang, Yongqing Cai +8
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Heusler alloys: electronic and magnetic properties #MXene and MAX Phase Materials #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1301.6106
arxiv created 2013/01/25 · openalex publication_date 2013/01/25 · arxiv updated 2013/01/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high spin-injection efficiency, and consequently high GMR ratio. Transport calculations further confirms the superiority of the all-Heusler architecture over the conventional Heusler/transition-metal(TM) structure by comparing their transmission coefficients and interfacial resistances of parallel conduction electrons, as well as the macroscopic current-voltage (I-V) characteristics. We suggest future theoretical and experimental efforts in developing novel all-Heusler GMR junctions for the read heads of the next generation high-density hard disk drives (HDDs).