The Charm-Strange Contribution to Charged-Current DIS Structure Functions

1996/10/02 by Barone, V., U. D’Alesio, D'Alesio, U. +1
Engineering · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #High Energy Physics - Phenomenology (hep-ph) #Low-power high-performance VLSI design #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.hep-ph/9610211

openalex publication_date 1996/10/02 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We review the present theoretical knowledge of the charm--strange contribution to charged--current DIS structure functions. In particular, the uncertainties arising from the choice of the factorization scale, of the massive QCD scheme, and of the parton fit are discussed.

Related

• Probing the strange content of the proton with charm production in charged current at LHeC
• Charged Current Diffractive Structure Functions
• Strange, charm, and bottom flavors in CTEQ global analysis
• Recent QCD results from the xFitter project: Probing the strange content of the proton with charm production in charged current at LHeC
• Strange form factors and Chiral Perturbation Theory