2019/01/30 by Elahe Rastegar Pashaki, Pashaki, Elahe Rastegar, Hassan Kaatuzian +3
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Photonic Crystals and Applications #Photonic and Optical Devices #Plasmonic and Surface Plasmon Research #physics.app-ph
paper · pdf · doi:10.48550/arxiv.1901.10735
12 pages; 12 figures
arxiv created 2019/01/30 · openalex publication_date 2019/01/30 · arxiv updated 2019/01/31 · openalex created_date 2019/07/30 · openalex updated_date 2026/07/28
Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are one of the most popular structures for implementation of high-quality photon/plasmon detectors in infrared wavelengths. In this paper, an integrated Silicon Germanium (SiGe) core MSM plasmon detector is proposed to detect lambda=1550 nm with internal photoemission mechanism. Performance characteristics of the new device are simulated with a simplified hydrodynamic model. In a specific bias point (V=3 V and the incident optical power of 0.31 mW), the output current is 404.3 uA (276 uA detection current and 128.3 uA dark current), responsivity is 0.89 A/W and the 3-dB electrical bandwidth is 120 GHz. Simulation results for the proposed Plasmon detector, in comparison with the empirical results of a reported Si-based MSM device, demonstrate considerable responsivity enhancement.