2020/03/02 by Kumar, Avinash, Uttam Singisetti, Singisetti, Uttam
Engineering · Materials Science · #Applied Physics (physics.app-ph) #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ga2O3 and related materials #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2003.00959
openalex publication_date 2020/03/02 · openalex created_date 2024/04/10 · openalex updated_date 2026/07/28
\mathrmβ-Gallium oxide (\mathrmβ-Ga2O3) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron gas (2DEG) in \mathrmβ-(AlxGa1-x)2O3/Ga2O3 heterostructures show the promise for high speed transistors. However, the experimental results do not get close to the predicted mobility values. In this work, We perform more comprehensive calculations to study the low field 2DEG transport properties in the \mathrmβ-(AlxGa1-x)2O3/Ga2O3 heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening polar optical phonon screening. We report the temperature dependent low-field electron mobility.