2013/10/08 by Wenping Geng, Xiaojie Lou, Geng, Wenping +15
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci) #Multiferroics and related materials #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1310.1977
17 pages, 3 figures, 1 table
arxiv created 2013/10/08 · openalex publication_date 2013/10/08 · arxiv updated 2013/10/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/effective cycling voltage through varying the waveform of the electrical excitation. Interestingly, it is found that the fatigue endurance of the film is determined by the effective voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the effective voltage should be considered as the genuine driving voltage determining the polarization fatigue in PLZT antiferroelectric films.