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Canted antiferromagnetism and excitonic order in gated double-layer graphene

2025/10/22 by Apinyan, V., Kopeć, T. K. · 1 citation
#FOS: Physical sciences #Strongly Correlated Electrons (cond-mat.str-el)

paper · doi:10.48550/arxiv.2510.19881

Abstract

We study the effects of the electron-electron interactions on the excitonic properties and charge-density modulations in the AB stacked double-layer (DL) graphene, placed in the external gate-potential V. The coexistence of the canted antiferromagnetic order and excitonic pairing gap has been studied with the help of the generalized Hubbard model. We calculate the chemical potential μ, the average charge density difference between the layers δn, the antiferromagnetic gap-function Δ\rm AFM and the excitonic order parameters Δσ in the zero temperature limit. We found that the excitonic pairing order parameter has a larger energy scale than the canted antiferromagnetic gap-function. The charge neutrality, in the DL graphene system, occurs only in the absence of the external gate-potential V. Moreover, we have shown that the values of the antiferromagnetic gap-function Δ\rm AFM and excitonic order parameter Δσ are always increasing at the large values of inter-layer Coulomb interaction, while they are decreasing for large values of the applied gate-potential V.

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