2014/12/28 by F. Eskandari, M. Ranjbar, Eskandari, F. +5
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Gas Sensing Nanomaterials and Sensors #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1412.8112
arxiv created 2014/12/28 · openalex publication_date 2014/12/28 · arxiv updated 2014/12/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF, λ=248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV-Vis spectrophotometer, respectively. Real-time measurement of electrical conductivity during laser irradiation showed a transient or persistent photoconductivity effect. The effect of laser energy on this photoconductivity was also investigated. Based on the observed photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), the observed photoconductivity effect was described.