2015/02/26 by José I. Martínez, F. Flóres, Fernando Flores +11
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Electrochemical Analysis and Applications #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1502.07554
5 pages, 4 figures
arxiv created 2015/02/26 · openalex publication_date 2015/02/26 · arxiv updated 2015/02/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Three driving forces control the energy level alignment between transition-metal oxides and organic materials: the chemical interaction between the two materials, the organic electronegativity and the possible space charge layer formed in the oxide. This is illustrated in this letter by analyzing experimentally and theoretically a paradigmatic case, the TiO2(110) / TCNQ interface: due to the chemical interaction between the two materials, the organic electron affinity level is located below the Fermi energy of the n-doped TiO2. Then, one electron is transferred from the oxide to this level and a space charge layer is developed in the oxide inducing an important increase in the interface dipole and in the oxide work function.