2025/05/05 by Julian L. Pita Ruiz, Ruiz, Julian L. Pita, Narges Dalvand +3 · 1 citation
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Optics (physics.optics) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2505.02662
openalex publication_date 2025/05/05 · openalex created_date 2025/10/14 · openalex updated_date 2026/07/28
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Here, we present three freeform SiN devices-a coarse wavelength-division multiplexer, a five-mode mode-division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robustness of inverse-designed components. We demonstrate up to a 1200x reduction in footprint while maintaining relatively large minimum feature sizes of up to 160 nm, showing that inverse-designed SiN devices can be as compact as their silicon counterparts. These results enable high-density integration in SiN photonics and pave the way for multidimensional data transmission and quantum applications, as the inverse design technique can be applied to different SiN thicknesses and is potentially extendable to other low- and mid-index platforms.