Pseudo anomalous Hall effect in semiconductors and semimetals: A classical perspective

2025/06/19 by Yamada, Akiyoshi, Fuseya, Yuki
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2506.16137

Abstract

We demonstrate that the non-linear field dependence in the Hall effect, often indistinguishable from the anomalous Hall effect, can be realized entirely within the classical mechanism due to the Lorentz force by analyzing multi-valley models for semiconductors and semimetals. The non-linear component in the Hall resistivity ρ_H^{\rm NL} originates from carrier mobility anisotropy or the coexistence of different charges. Since ρ_H^{\rm NL} is inversely proportional to the carrier difference between electrons and holes Δn, it exceeds its zero-field value near charge neutrality. As a practical example, we show that the magnitude of the classical non-linear Hall response in ZrTe₅ is comparable to the experimental values, underscoring the importance of accounting for classical contributions before attributing non-linear Hall effects to quantum mechanisms.

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