2024/12/28 by S. Massabeau, Oliver Paull, Massabeau, S. +23
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Molecular Junctions and Nanostructures #Semiconductor materials and interfaces #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.2412.20108
openalex publication_date 2024/12/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further technologically-relevant devices remains to modulate the emission, with low-energy consumption operation. To this aim, ferroelectric materials coupled to active spin-orbit layers such as two-dimensional transition metal dichalcogenides are suitable candidates. In this work, we present the realization of a large area heterostructure of CoFeB/PtSe2/MoSe2 on a bi-domain LiNbO3 substrate. Using THz time-domain spectroscopy, we show that the ferroelectric polarization direction induces a sizeable modulation of the THz emission. We rationalise these experimental results by using band structure and spin accumulation calculations that are consistent with an interfacial spin-to-charge conversion mediated by inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface and being tuned by ferroelectricity in the adjacent LiNbO3 surface. This work points out the relevance of field effect spin-orbit architectures for novel THz technologies.