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Strong Damping-Like Torques in Wafer-Scale MoTe2 Grown by MOCVD

2024/04/29 by Stasiu Thomas Chyczewski, Chyczewski, Stasiu Thomas, Hanwool Lee +11
Materials Science · #2D Materials and Applications #Boron and Carbon Nanomaterials Research #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Organic and Molecular Conductors Research

paper · pdf · doi:10.48550/arxiv.2404.19135

openalex publication_date 2024/04/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T^′ phase MoTe2 is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T^′ MoTe2 using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C4H9)2Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T^′ and 2H MoTe2 mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T^′ MoTe2 films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T^′ MoTe2/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T^′ MoTe2 film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.

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