2023/11/09 by Erwin Mönch, Mönch, Erwin, Sophia Schweiss +17
Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optics (physics.optics) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2311.05468
openalex publication_date 2023/11/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polarities of magnetic field increases with lowering power, but, nevertheless, remains substantially lower than expected from conventional theory assuming interaction of the plane electromagnetic wave with the uniform 2DES. Our analysis shows that all data can be well described by the nonlinear CR-enhanced electron gas heating in both CRA and CRI regimes. This description, however, requires a source of anomalous absorption of radiation in the CRI regime. It can stem from evanescent electromagnetic fields originating from the near-field diffraction within or in the vicinity of the quantum well hosting the 2DES.