Intensive gamma-ray light sources based on oriented single crystals

2024/01/19 by Gennady B. Sushko, Sushko, Gennady B., Andrei V. Korol +3
Physics and Astronomy · #Crystallography and Radiation Phenomena #Radiation Detection and Scintillator Technologies #Advanced X-ray Imaging Techniques

paper · pdf · doi:10.48550/arxiv.2401.10596

Abstract

The feasibility of gamma-ray light sources based on the channeling phenomenon of ultra-relativistic electrons and positrons in oriented single crystals is demonstrated using rigorous numerical modeling. Case studies are presented for 10 GeV and sub-GeV e^-/e⁺ beams incident on 10^-1-10⁰ mm thick diamond and silicon crystals. It is shown that for moderate values of the beam average current (\lesssim 10 μA) the average photon flux in the energy range 10⁰-10² MeV emitted within the 10¹-10³ μrad cone and 1 % bandwidth can be on the level of 10¹⁰ photon/s for electrons and 10¹⁰-10¹² photon/s for positrons. These values are higher than the fluxes available at modern laser-Compton gamma ray light sources.

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