2025/10/12 by Michele Bissolo, Bissolo, M., Marco Dembecki +23
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices
paper · doi:10.48550/arxiv.2510.10743
openalex publication_date 2025/10/12 · openalex created_date 2025/10/15 · openalex updated_date 2026/07/28
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 °C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 0.371±0.001 nm and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.