2024/03/13 by Pavel V. Kolesnichenko, Kolesnichenko, Pavel V., Lukas Wittenbecher +13 · 1 citation
Engineering · Materials Science · #2D Materials and Applications #Applied Physics (physics.app-ph) #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures
paper · pdf · doi:10.48550/arxiv.2403.08390
openalex publication_date 2024/03/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Two-dimensional semiconducting transition metal dichalcogenides (TMDs) are promising for optoelectronic applications due to their strongly bound excitons. While bright excitons have been thoroughly scrutinized, dark excitons are much less investigated as they are not observable with far-field spectroscopy. However, with their non-zero momenta, dark excitons are significant for applications requiring long-range transport or coupling to external fields. We access such dark excitons in WS2 monolayer using transient photoemission electron microscopy with sub-diffraction limited spatial resolution (75 nm) and exceptionally high temporal resolution (13 fs). Image time series of TMD flakes are recorded at several different fluences. We directly observe the ultrafast formation of dark K-Q excitons in monolayer WS2 occurring within 14-50 fs and follow their subsequent picosecond decay. We distinguish exciton dynamics between the interior and edges of the monolayer TMD and conclude that the long-term evolution of dark excitations is defect-mediated while intervalley scattering is not affected.