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Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr2Si2Te6 magnet

2023/03/01 by Hector Iturriaga, Ju Chen, Iturriaga, Hector +15
Materials Science · #2D Materials and Applications #Boron and Carbon Nanomaterials Research #FOS: Physical sciences #MXene and MAX Phase Materials #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.2303.00824

openalex publication_date 2023/03/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

The discovery of long-range magnetic ordering in atomically thin materials catapulted the van der Waals (vdW) family of compounds into an unprecedented popularity. In particular, with a current push in space exploration, it is beneficial to study how the properties of such materials evolve under proton irradiation. Owing to their robust intra-layer stability and sensitivity to external perturbations, these materials provide excellent opportunities for studying proton irradiation as a non-destructive tool for controlling their magnetic properties. Specifically, the exfoliable Cr2Si2Te6 (CST) is a ferromagnetic semiconductor with the Curie temperature (TC) of ~32 K. Here, we have investigated the magnetic properties of CST upon proton irradiation as a function of fluence (1 x 1015, 5 x 1015, 1 x 1016, 5 x 1016, and 1 x 1018 H+/cm2) by employing variable-temperature, variable-field magnetization measurements coupled with electron paramagnetic resonance (EPR) spectroscopy and detail how the magnetization, magnetic anisotropy and EPR spectral parameters vary as a function of proton fluence across the magnetic phase transition. While the TC remains constant as a function of proton fluence, we observed that the saturation magnetization and magnetic anisotropy diverge at the proton fluence of 5 x 1016 H+/cm2, which is prominent in the ferromagnetic phase, in particular. This work demonstrates that proton irradiation is a feasible method for modifying the magnetic properties and local magnetic interactions of vdWs crystals, which represents a significant step forward in the design of future spintronic and magneto-electronic applications.

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