Point defects on III-V semiconductor surfaces

2000/10/23 by G. Schwarz, Jörg Neugebauer, Schwarz, G. +5
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0010342

4 pages including figures. Submitted to Proceedings of the ICPS 25, Osaka, 17-22 September 2000. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.html

arxiv created 2000/10/23 · openalex publication_date 2000/10/23 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The basic properties of point defects (atomic geometry, the position of charge-transfer levels, and formation energies) on the (110) surface of GaAs, GaP, and InP have been calculated employing density-functional theory. Based on these results we discuss the electronic properties of surface defects, defect segregation, and compensation.

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