2004/12/15 by Eugene А. Eliseev, E. A. Eliseev, Eliseev, E. A. +2
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Material Properties and Applications #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0412397
12 pages, 8 figures
arxiv created 2004/12/15 · openalex publication_date 2004/12/15 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The model for calculation of relaxor ferroelectrics thin films properties is proposed. The basis of the model is the theory of random field. This field is originated from the chemical disorder allowing for influence of the film surfaces, which destroys the polar long-range order and transform it into mixed state of ferroelectric glass (FG) or dipole glass (DG). The spatial profiles and averaged over coordinate inside the film values of properties of relaxor ferroelectric film were calculated with the random field distribution function. As an example the dependence of the order parameter on film thickness, temperature and distribution function characteristics was obtained. The critical thickness and temperature of the size-driven phase transition from FG to DG state as a function of the film and distribution function characteristics were calculated.